SKU:13532805962
Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1sp
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Cu Film on Ta/SiO2/ 4"Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 4"x0.525mm, 1spSpecifications: Cu coated SiO2 Si Wafer (4 inch size) Thickness of Cu polycrystalline <111> film: 100 nm Thickness of Ta diffusion barrier: 50 nm 4 inch dia SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, Singe side polished Resistivities: 1 20 ohm cm thermal oxide: 300 nm thickness Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag
support rod ( 10 mm dia x 62 mm L )
Slurry Reservoir
respectively)
Meter Type Variable Area Scale 2" Scale Valve Stainless Steel Valve Temperature Limit 103 F Pressure Limit 100 PSI (Caution: Please alway control the pressure of air intake less than 100 psi) Connection Size 8th inch Accuracy 4% Low Range Cubic Centimeters per Minute 500 CCM High Range Cubic Centimeters per Minute 5000 CCM Please click the picture for the details of flow meter
Vacuum is used for purging the chamber before the operation
5mm in diameter)
Wafer size: 2" Diameter x 1 mm thick
It's an ideal material for aerospace
Loading Capacity
99% (Oxygen < 70 ppm)
High-profile silicon O-Rings (2 pcs) can withstand temperatures upto 250°C
Edge : CNC ground
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