SKU:91730466595
Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1spSpecifications: Cu coated SiO2 Si Wafer ( 10x10 mm size) Thickness of polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 10x10x0. 5 mm Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm thermal oxide: 300 nm Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order
After crimping
APS: 10-30 nm
4H-SiC (0001)
Limit: 70 centigrade
SPECIFICATIONS: Die Set Dimensions
20 mg / cm^2
Two steel support plates
5 +/- 1 mm) Tube Length 1200 mm Detailed dimension drawing Max
APS: 40 nm
200W AC motor
Length: 350mm
Warranty One-year limited warranty with lifetime support (rusted and damaged parts due to improper storage condition or maintenance are not covered by warranty)
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