SKU:91730466595

Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp

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Regular price $44.85 USD
Regular price $91.85 USD Sale price $44.85 USD
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18

Description

Cu Film on Ta/SiO2/Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1spSpecifications: Cu coated SiO2 Si Wafer ( 10x10 mm size) Thickness of polycrystalline Cu <111> film: 400 nm Thickness of Ta diffusion barrier: 50 nm 10x10x0. 5 mm Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm thermal oxide: 300 nm Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order

After crimping

APS:             10-30 nm

4H-SiC (0001)

Limit: 70 centigrade

SPECIFICATIONS: Die Set Dimensions

20 mg / cm^2

Two steel support plates

5 +/- 1 mm) Tube Length 1200 mm  Detailed dimension drawing Max

APS:              40 nm

200W AC motor

Length: 350mm

Warranty One-year limited warranty with lifetime support (rusted and damaged parts due to improper storage condition or maintenance are not covered by warranty)

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Exchange/Return Notes
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