SKU:30202845963
Cu Film on Ta/SiO2/ Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1sp
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USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Cu Film on Ta/SiO2/ Silicon Wafer, Cu=100 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped 10x10x0.525mm, 1spSpecifications: Cu coated SiO2 Si Wafer ( 10x10 mm size) Thickness of polycrystalline Cu <111> film: 100 nm Thickness of Ta diffusion barrier: 50 nm 10x10x0. 5 mm SiO2 Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm thermal oxide: 300 nm Surface Roughness: as grown Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order
Roller Rod
See left picture)
Exhaust pipe Port 30mm Thermocouple Type PT100 Sensor Overheat protection sensor automatically cuts power if over-heated Shelves 2 stainless steel shelves were included for immediate use
Pocket Size(mil): L115*W68*D28 Pocket Size(mm): L2
which can maintain chemical powder during tube rotating
Substrate of Copper Purity > 99
Polished: Two sides polished
100 pcs/bag
100 pcs of AG4 cells cases
and milling sintered ceramic samples up to 0
8 channels work independently
Compliance CE Certified Warranty One year limited with lifetime support
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